 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SMD Type MOSFET N-Channel PowerTrench MOSFET KDB2572(FDB2572) Features rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A +0.1 1.27-0.1 TO-263 +0.1 1.27-0.1 +0.2 4.57-0.2 Unit: mm Qg(tot) = 26nC (Typ.), VGS = 10V Low Miller Charge +0.2 8.7-0.2 UIS Capability (Single Pulse and Repetitive Pulse) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 0.4 +0.2 -0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current-Continuous TC=25 TA=25 Power dissipation Derate above 25 Thermal Resistance Junction to Ambient Thermal Resistance, Junction-to-Case Channel temperature Storage temperature ReJA ReJC Tch Tstg PD Symbol VDSS VGSS ID Rating 150 20 29 4 135 0.9 43 1.11 175 -55 to +175 Unit V V A A W W/ /W /W 5.60 1 Gate 2 Drain 3 Source Low QRR Body Diode www.kexin.com.cn 1 SMD Type MOSFET KDB2572(FDB2572) Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Symbol VDSS IDSS IGSS VGS(th) ID=250iA Testconditons VGS=0V Min 150 1 250 100 2.0 4.0 0.045 0.054 0.050 0.075 0.126 0.146 1770 VDS=25V,VGS=0,f=1MHZ 183 40 VGS = 0V to 10V VGS = 0V to 2V 26 3.3 8 VDS = 75 V, ID = 9A,Ig=1.0mA 5 6 36 11 VDD = 75 V, ID = 9 A, VGS = 10 V, RGEN = 11 14 31 14 66 ISD=9A ISD=4A ISD = 9A, dISD/dt =100A/is ISD = 9A, dISD/dt =100A/is 1.25 1.0 74 169 34 4.3 pF pF pF nC nC nC nC nC ns ns ns ns ns ns V V ns nC U Typ Max Unit V A A nA V VDS=120V,VGS=0 VDS=120V,VGS=0,TC=150 VGS= 20V VDS = VGS, ID = 250iA VGS=10V,ID=9A Drain to source on-state resistance RDS(on) VGS=6V,ID=4A VGS=10V,ID=9A,TC=175 Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge Ciss Coss Crss Qg(TOT) Qg(TH) Qgs Qgs2 Qgd tON td(ON) tr td(OFF) tf tOFF VSD trr QRR 2 www.kexin.com.cn |
Price & Availability of KDB2572
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |